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Datasheet 2SD2113 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SD2113 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD2113
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 100 |
Inchange Semiconductor |
2SD2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SD2499 | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
Toshiba Semiconductor |
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2SD2041 | TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM Semiconductor |
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2SD234 | Silicon NPN Power Transistors |
SavantIC |
Esta página es del resultado de búsqueda del 2SD2113. Si pulsa el resultado de búsqueda de 2SD2113 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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