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Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features • Ultrasmall package allows miniaturization in end products. • Large current capacity (IC=0.7A) and low-saturation v

Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1177 7.2±0.3 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current tra

RoHS 2SD874 2SD874 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 30 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3.

Ordering number : EN1784C 2SD1618 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP http://onsemi.com Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s Specifications Absolu

Elektronische Bauelemente 2SD1816 4A , 120V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Collector-to-Emitter Saturation Voltage Excllent Linearity of hFE High fT Fast Switching Time TO-251 A BC

SMD Type Silicon NPN epitaxial planer type 2SD968, 2SD968A Transistors Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage 2SD968 2SD968A Collector to emitter voltage 2SD968