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Datasheet 2SD186 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
10 | 2SD1861 | Power transistor Transistors
Power transistor (40V, 2A)
2SD1759 / 2SD1861
2SD1759 / 2SD1861
zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.
zEquivalent circuit
C
B
RBE 4kΩ
C : Collector B : Base E : Emitter |
ROHM Semiconductor |
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9 | 2SD1862 | Medium Power Transistor Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240
Structure Epitaxial planar type NPN silicon transistor
0.5±0.1
Dimensions (Unit : mm)
2SD1766
4.5+−00..21 |
ROHM Semiconductor |
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8 | 2SD1863 | Power Transistor Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 /
2SB1241 / 2SB1181
Structure Epitaxial planer type NPN silicon transistor
Dimensions (Unit : mm)
2SD1 |
ROHM Semiconductor |
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7 | 2SD1864 | Silicon NPN transistor 2SD1864
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-92LM 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92LM Plastic Package.
特征 / Features 饱和压降低,与 2SB1243 互补。 Low VCE(sat),complementary pair with 2SB1243.
用途 / Applications 用于一般 |
BLUE ROCKET ELECTRONICS |
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Número de pieza | Descripción | Fabricantes | |
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