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Datasheet 2SD1691 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SD1691 | NPN SILICON POWER TRANSISTOR |
 NEC |
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| 3 | 2SD1691 | LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES
*High Power Dissipation: Pc=1.5W(Ta=25℃) *Complementary to 2SB1151
1
TO-126C
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃)
PARAMETER
Collector-Base Vol |
 Unisonic Technologies |
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| 2 | 2SD1691 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1691
DESCRIPTION ·With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC conv |
 SavantIC |
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| 1 | 2SD1691T | NPN Silicon Epitaxial Power Transistor ST 2SD1691T
NPN Silicon Epitaxial Power Transistor
For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain.
E C B
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector to Base Voltage Collector t |
 SEMTECH |
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