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Datasheet 2SD1616A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SD1616A | NPN Silicon Transistor DATA SHEET
SILICON TRANSISTORS
2SD1616, 2SD1616A
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Low VCE(sat):
VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility
PT = 0.75 W, VCEO = 50/60 V, IC(DC |
 NEC |
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| 6 | 2SD1616A | NPN Plastic-Encapsulated Transistor Elektronische Bauelemente
2SD1616A
1A , 120V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Power dissipation
CLASSIFICATION OF hFE (1)
Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-U
Range
135~270
200~400
300~600
TO- |
 SeCoS |
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| 5 | 2SD1616A | NPN Transistor RoHS 2SD1616A
2SD1616A TRANSISTOR (NPN)
TO-92
FEATURE
DPower dissipation
TPCM:
0.75 W (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
1A
V(BR)CBO:
120 V
OOperating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
1. EMITTER 2. COLLECTOR 3. BSAE
123
ELE |
 WEJ |
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| 4 | 2SD1616A | NPN Silicon Transistor ST 2SD1616 / 2SD1616A
NPN Silicon Transistor
The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application.
The transistor is subdivided into three groups R, O and Y, according to its DC current gain
On special request, these transistors can be m |
 SEMTECH |
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