Datasheet 2SCR573DFHG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SCR573DFHG	NPN 3.0A 50V Middle Power Transistor 2SCR573D FHG NPN 3.0A 50V Middle Power Transistor Datasheet AEC-Q101 Qualified Parameter VCEO Value 50V lOutline CPT 　 IC 3A lFeatures 1) Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR573D FHG. 3) Low VCE(sat) 　　VCE(sat)=350mV(Max.). 　　(IC/IB=1A/50mA) 　 TO-2	ROHM Semiconductor

2SCR573D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SCR573D	NPN 3.0A 50V Middle Power Transistor 2SCR573D NPN 3.0A 50V Middle Power Transistor Parameter VCEO IC Value 50V 3A lFeatures 1) Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR573D. 3) Low VCE(sat) 　　VCE(sat)=0.35V(Max.). 　　(IC/IB=1A/50mA) 4) Lead Free/Rohs Compliant lOutline CPT	ROHM Semiconductor
2SCR573D	NPN 3.0A 50V Middle Power Transistor 2SCR573D NPN 3.0A 50V Middle Power Transistor Parameter VCEO IC Value 50V 3A lFeatures 1) Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR573D. 3) Low VCE(sat) 　　VCE(sat)=0.35V(Max.). 　　(IC/IB=1A/50mA) 4) Lead Free/Rohs Compliant lOutline CPT	ROHM Semiconductor
2SCR573D	Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SCR573D DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)=0.35V@(IC=1A,IB=50mA) ·Complementary NPN types:2SAR573D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performanc	Inchange Semiconductor

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