2SCR514P データシート PDFこの部品の機能は「Middle Power Transistors」です。 |
検索結果を表示する |
部品番号 |
2SCR514P Middle Power Transistors 2SCR514P Middle Power Transistors (80V / 700mA) Parameter VCEO IC Value 80V 0.7A lFeatures 1)Low saturation voltage, typically VCE(sat)=300mV (Max.) (IC/IB=300mA/15mA) 2)High speed switching ROHM Semiconductor |
文字列「 2SCR514 」「 2SCR514P 」で始まる検索結果です。 |
部品説明 |
2SCR514P5 Middle Power Transistors 2SCR514P5 Middle Power Transistors (80V / 700mA) Parameter VCEO IC Value 80V 0.7A lFeatures 1)Low saturation voltage, typically VCE(sat)=300mV (Max.) (IC/IB=300mA/15mA) 2)High speed switching lOutline SOT-89 SC-62 MPT3 lInner circuit Datas ROHM Semiconductor |
2SCR514R NPN 0.7A 80V Middle Power Transistor 2SCR514R NPN 0.7A 80V Middle Power Transistor Parameter VCEO IC Value 80V 0.7A lFeatures 1)Suitable for Middle Power Driver 2)Complementary PNP Types:2SAR514R 1)Low saturation voltage, typically VCE(sat)=300mV(Max.) (IC/ IB=300mA/15mA) lOutline TSMT3 SOT-346T ROHM Semiconductor |
1422514 Bobbin Type Inductors C&D Technologies |
1422514 Bobbin Type Inductors C&D Technologies |
1422514C Bobbin Type Inductors www.murata-ps.com 1400 Series Bobbin Type Inductors FEATURES n RoHS compliant n Radial format n -40°C to 85°C operating temperature n Up to 13A IDC n 10μH to 22mH n Low DC resistance n Fully tinned leads n PCB mounting hole n Low temperature dependence n Backward compatible Murata |
2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2514 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 NEC |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |