|
|
Datasheet 2SCR513P Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SCR513P | NPN 1.0A 50V Middle Power Transistor 2SCR513P
NPN 1.0A 50V Middle Power Transistor
Datasheet
Parameter
VCEO IC
Value
50V 1.0A
lFeatures
1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR513P 3) Low VCE(sat)
VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA)
4) Lead Free/RoHS Compliant.
lOutline
MPT3
Base Collector
Emitter
| ROHM Semiconductor | transistor |
2 | 2SCR513P5 | Middle Power Transistors 2SCR513P5
Midium Power Transistors (50V / 1V)
Parameter
VCEO IC
Value
50V 1A
lFeatures
1)Low saturation voltage, typically VCE(sat)=-0.35V(Max.) (IC/IB=500mA/25mA) 2)High speed switching
lOutline
SOT-89 SC-62
MPT3
lInner circuit
Datasheet
lApplication LOW FRE | ROHM Semiconductor | transistor |
3 | 2SCR513PFRA | NPN 1.0A 50V Middle Power Transistor 22SSCCRR551133PPFRA
NPN 1.0A 50V Middle Power Transistor
Parameter
VCEO IC
Value
50V 1.0A
lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 22SSAARR551133PPFRA 3) Low VCE(sat)
VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA)
4) Lead Free/RoHS Compliant.
lOutline
MPT3
Base Collect | ROHM Semiconductor | transistor |
2SC Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SC0108T2Dx-xx | Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core 2SC0108T2Dx-xx Preliminary
2SC0108T2Dx-xx Description & Application Manual
Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core
Abstract
The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica CT-Concept transistor | | |
2 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame Panasonic Semiconductor transistor | | |
3 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame Panasonic Semiconductor transistor | | |
4 | 2SC100 | NPN Transistor w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
ETC transistor | | |
5 | 2SC1000 | (2SCxxx) Low Level and General Purpose Amplifiers w
w
w
.d
e e h s a t a
. u t4
m o c
Micro Electronics transistor | | |
6 | 2SC1000 | Silicon NPN Epitaxial Transistor ETC transistor | | |
7 | 2SC1002 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1002
DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym SavantIC transistor | |
Esta página es del resultado de búsqueda del 2SCR513P. Si pulsa el resultado de búsqueda de 2SCR513P se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |