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Datasheet 2SCR513P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SCR513PNPN 1.0A 50V Middle Power Transistor

2SCR513P NPN 1.0A 50V Middle Power Transistor Datasheet Parameter VCEO IC Value 50V 1.0A lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR513P 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA) 4) Lead Free/RoHS Compliant. lOutline MPT3 Base Collector Emitter
ROHM Semiconductor
ROHM Semiconductor
transistor
22SCR513P5Middle Power Transistors

2SCR513P5 Midium Power Transistors (50V / 1V) Parameter VCEO IC Value 50V 1A lFeatures 1)Low saturation voltage, typically  VCE(sat)=-0.35V(Max.)  (IC/IB=500mA/25mA) 2)High speed switching lOutline   SOT-89   SC-62 MPT3 lInner circuit           Datasheet lApplication LOW FRE
ROHM Semiconductor
ROHM Semiconductor
transistor
32SCR513PFRANPN 1.0A 50V Middle Power Transistor

22SSCCRR551133PPFRA NPN 1.0A 50V Middle Power Transistor Parameter VCEO IC Value 50V 1.0A lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 22SSAARR551133PPFRA 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA) 4) Lead Free/RoHS Compliant. lOutline MPT3 Base Collect
ROHM Semiconductor
ROHM Semiconductor
transistor


2SC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12SC0108T2Dx-xxDual Channel Ultra-compact Low-cost SCALE-2 Driver Core

2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica
CT-Concept
CT-Concept
transistor
22SC0829Silicon NPN epitaxial planar type

DataSheet.in Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame
Panasonic Semiconductor
Panasonic Semiconductor
transistor
32SC0829Silicon NPN epitaxial planar type

DataSheet.in Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame
Panasonic Semiconductor
Panasonic Semiconductor
transistor
42SC100NPN Transistor

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ETC
ETC
transistor
52SC1000(2SCxxx) Low Level and General Purpose Amplifiers

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Micro Electronics
Micro Electronics
transistor
62SC1000Silicon NPN Epitaxial Transistor

ETC
ETC
transistor
72SC1002Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1002 DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym
SavantIC
SavantIC
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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