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データシート 2SC5929 PDF ( Circuit Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | 2SC5929 | Silicon Transistor www.Datasheet.jp |
 ETC |
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2SC データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| 2SC2914 | Trans GP BJT NPN 400V 10A 3-Pin(2+Tab) TO-3 |
 New Jersey Semiconductor |
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| 2SCR533P | NPN 3.0A 50V Middle Power Transistor 2SCR533P Middle Power Transistors (50V / 3A) Parameter VCEO IC Value 50V 3A lFeatures 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=1A/50mA) 2)High speed switching lOutline SOT-89 SC-62 MPT3 lInner circuit Datasheet lAppl |
 ROHM Semiconductor |
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| 2SC4901 | Silicon NPN Transistor INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC4901 DESCRIPTION ·High Gain Bandwidth Product fT = 9 GHz TYP. ·High gain, low noise figure PG = 13.0 dB TYP., NF = 1.2 dB TYP. @ f = 900 MHz APPLICATIONS ·Designed for VHF, UHF wide band am |
 Inchange Semiconductor |
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| 2SC5037A | Silicon NPN triple diffusion planar type Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VC |
 Panasonic Semiconductor |
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| 2SC5553 | Silicon NPN triple diffusion mesa type(For horizontal deflection output) Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output (10.0) 15.5±0.5 φ 3.2±0.1 5° 3.0±0.3 5° 26.5±0.5 (23.4) 5° 5° 5° 0.7±0.1 I Features • High breakdown voltage, and high reliability through the use of a |
Panasonic Semiconductor |
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| 2SC3970 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A DESCRIPTION ·With TO-220Fa package ·High speed switching ·High VCBO ·Wide area of safe operation APPLICATIONS ·For high breakdown voltate ,high-speed switching |
 SavantIC |
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