2SC5929 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | 2SC5929 | Silicon Transistor www.Datasheet.jp |
 ETC |
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2SC5 Datasheet ( データシート ) - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| 2SC5772 | Trans GP BJT NPN 9V 0.075A 3-Pin MPAK |
 New Jersey Semiconductor |
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| 2SC5889 | DC/DC CONVERTER APPLICATIONS UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching *High allowable power dissipation. 1 APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes |
 UTC |
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| 2SC5127A | Silicon NPN triple diffusion planar type Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO |
 Panasonic Semiconductor |
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| 2SC5345 | Silicon Epitaxial Planar Transistor BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z High current transition frequency. Low output capacitance:Cob=1.4pF Low base time constant and high gain. Excellent noise response. Production specification 2SC5345 Pb Lead-free APPLICATIONS z General s |
 Galaxy Semi-Conductor |
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| 2SC5700 | Silicon NPN Epitaxial 2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005 Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline RENESAS P |
 Renesas |
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| 2SC5179-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, I |
 NEC |
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| 2SC536KM | SILICON NPN TRANSISTOR 2SC536M(3DG536M) 2SC536KM(3DG536KM) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于小信号一般放大电路。 Purpose: Small signal general purpose amplifier applications. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol |
 LZG |
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多くを見つけるデータシート
| 部品番号 | 部品説明 | メーカ | |
| ALC887 | The ALC887 is a 7.1 Channel High Definition Audio Codec with two independent SPDIF outputs. Featuring eight channels of DAC support 7.1 sound playback, and integrates two stereo ADC that can support a stereo microphone, and feature Acoustic Echo Cancellation (AEC), Beam Forming (BF), and Noise Suppression (NS) for voice applications. |
 Realtek |
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| BK3431 | The BK3431 chip is a highly integrated Bluetooth 4.0 low energy single mode device. It integrates a high-performance RF transceiver, baseband, ARM-core Micro processor, rich feature peripheral units, programmable protocol and profile
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 Beken |
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| C1318 | This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package. |
Panasonic |
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| F1B2CCI | VRRM=200V, Stack Silicon Diffused Diode, TO-220IS Package. |
 KEC |
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| 20N60C2 | 650V, Cool MOS Power Transistor, SPP20N60C2, SPB20N60C2, SPA20N60C2. |
 Infineon |
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