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データシート 2SC5929 PDF ( Circuit Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | 2SC5929 | Silicon Transistor www.Datasheet.jp |
 ETC |
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2SC データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| 2SC2713 | Silicon NPN Epitaxial Type SMD Type Silicon NPN Epitaxial Type 2SC2713 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High voltage VCEO=120V High hFE Low noise. Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Bas |
 Kexin |
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| 2SC4622 | Trans GP BJT 400V 7A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
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| 2SC4797 | Silicon NPN Triple Diffused 2SC4797 Silicon NPN Triple Diffused Application TV / character display horizontal deflection output TO–3PFM Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolu |
 Hitachi Semiconductor |
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| 2SC3496A | NPN Silicon Triple Diffused Transistor SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3496A TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features High-speed switching +0.2 9.70 -0.2 High collector-base voltage (Emitter open) VCBO Satisfactory linearity |
Kexin |
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| 2SC5890 | Silicon NPN RF Transistor INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5890 DESCRIPTION ·High Gain Bandwidth Product fT = 7.8 GHz TYP. ·High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS ·Designed for use in UHF |
 Inchange Semiconductor |
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| 2SC4332-Z | NPN Silicon Epitaxia SMD Type NPN Silicon Epitaxia 2SC4332-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector saturation voltage. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 + |
Kexin |
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