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2SC5929 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 2SC5929

Silicon Transistor

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ETC
ETC
2SC5929 データシート pdf



2SC5 Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
2SC5772

Trans GP BJT NPN 9V 0.075A 3-Pin MPAK

New Jersey Semiconductor
New Jersey Semiconductor
2SC5929 データシート pdf
2SC5889

DC/DC CONVERTER APPLICATIONS

UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching *High allowable power dissipation. 1 APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes

UTC
UTC
2SC5929 データシート pdf
2SC5127A

Silicon NPN triple diffusion planar type

Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO

Panasonic Semiconductor
Panasonic Semiconductor
2SC5929 データシート pdf
2SC5345

Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z High current transition frequency. Low output capacitance:Cob=1.4pF Low base time constant and high gain. Excellent noise response. Production specification 2SC5345 Pb Lead-free APPLICATIONS z General s

Galaxy Semi-Conductor
Galaxy Semi-Conductor
2SC5929 データシート pdf
2SC5700

Silicon NPN Epitaxial

2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005 Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline RENESAS P

Renesas
Renesas
2SC5929 データシート pdf
2SC5179-T1

NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, I

NEC
NEC
2SC5929 データシート pdf
2SC536KM

SILICON NPN TRANSISTOR

2SC536M(3DG536M) 2SC536KM(3DG536KM) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于小信号一般放大电路。 Purpose: Small signal general purpose amplifier applications. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol

LZG
LZG
2SC5929 データシート pdf


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