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2SC5929 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 2SC5929

Silicon Transistor

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ETC
ETC
2SC5929 データシート pdf



2SC5 Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
2SC5513

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC

Panasonic Semiconductor
Panasonic Semiconductor
2SC5929 データシート pdf
2SC5342M

NPN Silicon Transistor (Medium power amplifier)

Semiconductor 2SC5342M NPN Silicon Transistor Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979M Ordering Information Type NO. 2SC5342M

AUK corp
AUK corp
2SC5929 データシート pdf
2SC5913

Silicon NPN triple diffusion mesa type

Power Transistors 2SC5913 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT Monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in d

Panasonic Semiconductor
Panasonic Semiconductor
2SC5929 データシート pdf
2SC5382

(2SCxxxx) TRANSISTOR

Shindengen Electric
Shindengen Electric
2SC5929 データシート pdf
2SC5890

Silicon NPN RF Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5890 DESCRIPTION ·High Gain Bandwidth Product fT = 7.8 GHz TYP. ·High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS ·Designed for use in UHF

Inchange Semiconductor
Inchange Semiconductor
2SC5929 データシート pdf
2SC5018

Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to b

Panasonic Semiconductor
Panasonic Semiconductor
2SC5929 データシート pdf
2SC5128

Silicon NPN triple diffusion planar type

Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to bas

Panasonic Semiconductor
Panasonic Semiconductor
2SC5929 データシート pdf


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