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Datasheet 2SC5345 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | 2SC5345 | NPN Silicon Transistor (RF amplifier) Semiconductor
2SC5345
NPN Silicon Transistor
Description
• RF amplifier
Features
• High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response
Ordering I |
 AUK corp |
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| 10 | 2SC5345 | Silicon Epitaxial Planar Transistor BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z z z z High current transition frequency. Low output capacitance:Cob=1.4pF Low base time constant and high gain. Excellent noise response.
Production specification
2SC5345
Pb
Lead-free
APPLICATIONS
z General small signal amplifie |
 Galaxy Semi-Conductor |
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| 9 | 2SC5345 | TRANSISTOR 2SC5345 TRANSISTOR (NPN)
FEATURES z RF amplifier High current transition frequency fT=550MHz(Typ.), z [VCE=6V, IE=-1mA] z Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain z z Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25℃ unless otherwise |
 Jin Yu Semiconductor |
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| 8 | 2SC5345 | NPN Plastic Encapsulated Transistor 2SC5345
Elektronische Bauelemente 0.02A , 30V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
RF amplifier High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE |
 SeCoS |
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