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2SC3998 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
2 2SC3998

Silicon NPN Power Transistor

isc Silicon NPN Power Transistor isc Product Specification 2SC3998 DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VC

Inchange Semiconductor
Inchange Semiconductor
2SC3998 データシート pdf
1 2SC3998

Very High-Definition Color Display Horizontal Deflection Output Applications

Ordering number:ENN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. www.Datasheet.jp Package Dimensions unit:mm 2048B [2SC3998] 6.0 2

Sanyo Semicon Device
Sanyo Semicon Device
2SC3998 データシート pdf


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