|
|
Datasheet 2SC3670 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SC3670 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3670
Strobe Flash Applications Medium Power Amplifier Applications
2SC3670
Unit: mm
• High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 |
Toshiba Semiconductor |
2SC3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SC372 | Silicon NPN Epitaxial Transistor |
ETC |
|
2SC373 | Silicon NPN Epitaxial Transistor |
ETC |
|
2SC3205 | 2SC3205 |
Korea Electronics |
Esta página es del resultado de búsqueda del 2SC3670. Si pulsa el resultado de búsqueda de 2SC3670 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |