2SC3355 データシート PDFこの部品の機能は「Diode ( Rectifier )」です。 |
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2SC3355 Silicon NPN RF Transistor INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 G Inchange Semiconductor |
2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low NEC |
2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took Renesas |
2SC3355 NPN Silicon Transistor UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES * Low Noise and High Gain * High Power Gain 1 TO-92 ORDERING INFORMATI Unisonic Technologies |
2SC3355 Diode ( Rectifier ) American Microsemiconductor |
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