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2SB1669-Z データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 2SB1669-Z

Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1669-Z DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is ideal f

Inchange Semiconductor
Inchange Semiconductor
2SB1669-Z データシート pdf




2SB166 データシート - 検索結果

部品番号 部品説明 メーカ PDF
2SB166040ML

SCHOTTKY BARRIER DIODE CHIPS

2SB166040ML 2SB166040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB166040ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capabilit

Silan Microelectronics Joint-stock
Silan Microelectronics Joint-stock
2SB1669-Z データシート pdf
2SB1668

Power Transistor

2SB1668 Transistors Power Transistor (−100V, −8A) 2SB1668 !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2607. !External dimensions (Units : mm)

Rohm
Rohm
2SB1669-Z データシート pdf
2SB166100MA

LOW IR SCHOTTKY BARRIER DIODE CHIPS

2SB166100MA 2SB166100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB166100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and ma

Silan Microelectronics Joint-stock
Silan Microelectronics Joint-stock
2SB1669-Z データシート pdf
2SB1667

Silicon PNP Triple Diffused Type

SMD Type Silicon PNP Triple Diffused Type 2SB1667 TO-252 +0.15 1.50 -0.15 Transistors Features Low collector saturation voltage. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127

Guangdong Kexin Industrial
Guangdong Kexin Industrial
2SB1669-Z データシート pdf


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