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2SB1412 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
7 2SB1412

Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1412 DESCRIPTION ·Small and slim package making it easy to make 2SB1205-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOL

Inchange Semiconductor
Inchange Semiconductor
2SB1412 データシート pdf
6 2SB1412

SILICON PNP TRANSISTOR

2SB1412(3CA1412) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier applications. 特点:饱和压降低,极好的直流电流增益特性,与 2SD2118(3DG2118)互补。 Features: Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118(3DG2118). 极限参数/Absolute maximum ratings(T

LZG
LZG
2SB1412 データシート pdf
5 2SB1412

Low Frequency Transistor

SMD Type Low Frequency Transistor 2SB1412 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 PNP silicon transistor. 1 Base 2 Collector 3 Emitter Ab

Kexin
Kexin
2SB1412 データシート pdf
4 2SB1412

Low Frequency Transistor

Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute

Rohm
Rohm
2SB1412 データシート pdf


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