2SA921 データシート PDFこの部品の機能は「SilICon PNP Epitaxial Planer Type(for High Breakdown Voltage Low-noise AmplifICation)」です。 |
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部品番号 |
2SA921 Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q High collector to Panasonic Semiconductor |
文字列「 2SA921 」「 2SA921 」で始まる検索結果です。 |
部品説明 |
2SC2921 POWER TRANSISTORS(15A/160V/150W) A A A Mospec Semiconductor |
2SC2921 NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) 2SC2921 AUDIO POWER AMPLIFIER DC TO DC CONVERTER NPN PLANAR SILICON TRANSISTOR MT-200 ! ! ! High Current Capability High Power Dissipation Complementary to 2SA1215 ABSOLUTE MAXIMUM RATING (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Wing Shing Computer Components |
2SC2921 Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose) LAPT sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2921 160 160 5 15 4 150(Tc=25°C) 150 –55 to +150 2SC2921 Application : Audio and General Purpose (Ta=25°C) 2SC2921 100max 100max 160min 50min∗ 2.0max 60typ 200typ V MHz pF 20.0min 4.0max Silicon NPN Sanken electric |
AK2921 Zero Drift operational amplifiers [AK2921] AK2921 Zero Drift operational amplifiers Feature AK2921 is the dual channel CMOS operational amplifires which is available to output with very low input offset voltage (+/- 1.0μV) and near zero input offset dirft. It’s operated with very small current consumptions, AKM |
B32921C Film Capacitors Film Capacitors EMI Suppression Capacitors (MKP) Series/Type: Date: B32921C/D ... B32928C/D December 2012 © EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express con EPCOS |
B32921D Film Capacitors Film Capacitors EMI Suppression Capacitors (MKP) Series/Type: Date: B32921C/D ... B32928C/D December 2012 © EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express con EPCOS |
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