データシート PDF 検索 - DataSheet.jp

2SA651 データシート PDF

この部品の機能は「SilICon PNP Power Transistor」です。


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部品番号
2SA651

Silicon PNP Power Transistor


INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA651 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation APP


Inchange Semiconductor
Inchange Semiconductor

データシート pdf


2SA651

Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1



New Jersey Semiconductor
New Jersey Semiconductor

データシート pdf



文字列「 2SA651 」「 2SA651 」で始まる検索結果です。

部品説明

2651A

Broadband Photodiode

2651A/2651E Broadband Photodiode DATASHEET | FEBRUARY 2012 FIBER OPTICS The 2651 provides the proven high performance of EMCORE’s photodiode technology in a very practical, cost-effective package. The 2651A features high linearity and low capacitance over a 1 GHz bandwidth. Th

EMCORE
EMCORE

 データシート pdf


2651E

Broadband Photodiode

2651A/2651E Broadband Photodiode DATASHEET | FEBRUARY 2012 FIBER OPTICS The 2651 provides the proven high performance of EMCORE’s photodiode technology in a very practical, cost-effective package. The 2651A features high linearity and low capacitance over a 1 GHz bandwidth. Th

EMCORE
EMCORE

 データシート pdf


2SD2651

Silicon NPN Epitaxial High Voltage Amplifier

2SD2651 Silicon NPN Epitaxial High Voltage Amplifier ADE-208-976 (Z) 1st. Edition October 2000 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Free Datasheet http:/// 2SD2651 Absolute Maximum Rat

Hitachi
Hitachi

 データシート pdf


2SD2651

Silicon NPN Epitaxial High Voltage Amplifier

2SD2651 Silicon NPN Epitaxial High Voltage Amplifier REJ03G0809-0200 (Previous ADE-208-976) Rev.2.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Abs

Renesas
Renesas

 データシート pdf


2SK2651

N-channel MOS-FET

2SK2651-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V 2,5Ω 6A 50W > Outline Drawing > Applications Switching Regulators U

Fuji Electric
Fuji Electric

 データシート pdf


2SK2651-01MR

N-channel MOS-FET

2SK2651-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V 2,5Ω 6A 50W > Outline Drawing > Applications Switching Regulators U

Fuji Electric
Fuji Electric

 データシート pdf

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