2SA651 データシート PDFこの部品の機能は「SilICon PNP Power Transistor」です。 |
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部品番号 |
2SA651 Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA651 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation APP Inchange Semiconductor |
2SA651 Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 New Jersey Semiconductor |
文字列「 2SA651 」「 2SA651 」で始まる検索結果です。 |
部品説明 |
2651A Broadband Photodiode 2651A/2651E Broadband Photodiode DATASHEET | FEBRUARY 2012 FIBER OPTICS The 2651 provides the proven high performance of EMCORE’s photodiode technology in a very practical, cost-effective package. The 2651A features high linearity and low capacitance over a 1 GHz bandwidth. Th EMCORE |
2651E Broadband Photodiode 2651A/2651E Broadband Photodiode DATASHEET | FEBRUARY 2012 FIBER OPTICS The 2651 provides the proven high performance of EMCORE’s photodiode technology in a very practical, cost-effective package. The 2651A features high linearity and low capacitance over a 1 GHz bandwidth. Th EMCORE |
2SD2651 Silicon NPN Epitaxial High Voltage Amplifier 2SD2651 Silicon NPN Epitaxial High Voltage Amplifier ADE-208-976 (Z) 1st. Edition October 2000 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Free Datasheet http:/// 2SD2651 Absolute Maximum Rat Hitachi |
2SD2651 Silicon NPN Epitaxial High Voltage Amplifier 2SD2651 Silicon NPN Epitaxial High Voltage Amplifier REJ03G0809-0200 (Previous ADE-208-976) Rev.2.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Abs Renesas |
2SK2651 N-channel MOS-FET 2SK2651-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V 2,5Ω 6A 50W > Outline Drawing > Applications Switching Regulators U Fuji Electric |
2SK2651-01MR N-channel MOS-FET 2SK2651-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V 2,5Ω 6A 50W > Outline Drawing > Applications Switching Regulators U Fuji Electric |
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