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Datasheet 2SA1615 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SA1615 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1615
DESCRIPTION ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation voltage:
hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for ro |
 Inchange Semiconductor |
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| 6 | 2SA1615 | PNP SILICON EPITAXIAL TRANSISTOR DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switchi |
 NEC |
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| 5 | 2SA1615 | P TYPE TTANSISTORS P TYPE TTANSISTORS -10A
2SA1615, 1615-Z
The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
PIN CONFIGURATION
2SA1615 2SA1615-Z
FEATURE Large current capacity: Ic |
 Stanson Technology |
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| 4 | 2SA1615-Z | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1615-Z
DESCRIPTION ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation voltage:
hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for |
Inchange Semiconductor |
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