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Datasheet 2SA1203 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SA1203 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1203
2SA1203
Audio Frequency Amplifier Applications
· Suitable for output stage of 3 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate) · Complementary to 2SC2883
Maximum Ratings (Ta = 25°C)
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 Toshiba Semiconductor |
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| 3 | 2SA1203 | TRANSISTOR 2SA1 203
SOT-89-3L
TRANSISTOR(PNP)
1. BASE
FEATURES z Complementary to 2SC2883 z Small Flat Package z Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitte |
 Jin Yu Semiconductor |
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| 2 | 2SA1203 | Audio Frequency Amplifier Applications SMD Type
Transistors
Audio Frequency Amplifier Applications 2SA1203
Features
Suitable For Output Stage of 3 Watts Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2883
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter V |
 Kexin |
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| 1 | 2SA1203 | Plastic-Encapsulate Transistors Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulate Transistors
2SA1203
FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3
TRANSISTOR (PNP)
SOT-89
1. BASE
Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -30 Operating and storage junction |
 TRANSYS |
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