2SA1080 データシート PDFこの部品の機能は「SilICon PNP Power Transistor」です。 |
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部品番号 |
2SA1080 Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Compleme Inchange Semiconductor |
2SA1080 Trans GP BJT PNP 90V 0.1A 3-Pin TO-92 New Jersey Semiconductor |
文字列「 2SA1080 」「 2SA1080 」で始まる検索結果です。 |
部品説明 |
ALD210800 PRECISION N-CHANNEL EPAD MOSFET ARRAY ADVANCED LINEAR DEVICES, INC. ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS(th)= +0.00V FEATURES & BENEFITS • Zero Threshold™ VGS(th) = 0.00 V +/-0.01V • VOS (VGS(th) match) to 2mV / 10mV max. • Sub-threshold voltage (nano-power) operation • < 100 mV Advanced Linear Devices |
ALD210800A PRECISION N-CHANNEL EPAD MOSFET ARRAY ADVANCED LINEAR DEVICES, INC. ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS(th)= +0.00V FEATURES & BENEFITS • Zero Threshold™ VGS(th) = 0.00 V +/-0.01V • VOS (VGS(th) match) to 2mV / 10mV max. • Sub-threshold voltage (nano-power) operation • < 100 mV Advanced Linear Devices |
ALD210802 MOSFET ( Transistor ) ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR e TM EPAD ® ENAB L E D ALD210802 VGS(th)= +0.20V GENERAL DESCRIPTION The ALD210802 precision enhancement mode N-Channel EPAD® MOSFET array is precision matche Advanced Linear Devices |
ALD210804 MOSFET ( Transistor ) ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR e TM EPAD ® ENAB L E D ALD210804 VGS(th)= +0.40V GENERAL DESCRIPTION The ALD210804 precision enhancement mode N-Channel EPAD® MOSFET array is precision matche Advanced Linear Devices |
ALD210808 MOSFET ( Transistor ) ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210808A/ALD210808 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR VGS(th)= +0.80V GENERAL DESCRIPTION The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precis Advanced Linear Devices |
ALD210808A MOSFET ( Transistor ) ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210808A/ALD210808 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR VGS(th)= +0.80V GENERAL DESCRIPTION The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precis Advanced Linear Devices |
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