2SA1015-Y データシート PDFこの部品の機能は「(2sa1015-xx) PNP SilICon PlastIC-encapsulate Transistor」です。 |
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部品番号 |
2SA1015-Y (2SA1015-xx) PNP Silicon Plastic-Encapsulate Transistor www.Datasheet.jp MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015-O 2SA1015-Y 2SA10 MCC |
文字列「 2SA1015 」「 2SA1015 」で始まる検索結果です。 |
部品説明 |
2SA1015 PNP Silicon Epitaxial Planar Transistor 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. Absolute Maximum Rating SEMTECH |
2SA1015 Silicon NPN Epitaxial Type TRANSISTOR 2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ Toshiba Semiconductor |
2SA1015 PNP SILICON TRANSISTOR Micro Electronics |
2SA1015 PNP Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURES SOT-23 z High voltage and high current z Excellent hFE Linearity z Low niose z Complementary to 2SC1815 1. BASE 2. EMITTER 3. COLLECTOR MARKING: BA MA Tuofeng Semiconductor |
2SA1015 PNP Transistor SMD Type TransistIoCrs PNP Transistor 2SA1015 Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Low niose: NF=1dB(Typ.) at f=1KHz +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.0 Kexin |
2SA1015 PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA1015 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratin Dc Components |
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