Datasheet 2N7002TB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2N7002TB	60V N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002TB 60V N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), [email protected],IDS@50mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Driv	Pan Jit International

2N700 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2N7000	200mA, 60V, N-Channel MOSFET 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package RDS(on) Id 0.35 A 0.20 A 3 2 1 VDSS 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) TYPICAL RDS(on) = 1.8Ω @10V	ST Microelectronics
2N7000	N-CHANNEL-ENHANCEMENT	TRSYS
2N7000	60V, 200mA, N-channel MOSFET MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Volt	Motorola Inc

Esta página es del resultado de búsqueda del 2N7002TB. Si pulsa el resultado de búsqueda de 2N7002TB se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap