|
|
Datasheet 2N65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 259 | 2N65 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N65
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5.0Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte |
 Inchange Semiconductor |
 |
| 258 | 2N65 | 650V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N65
2A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This |
 Unisonic Technologies |
|
| 257 | 2N65-C | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N65-C
2A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N65-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. |
Unisonic Technologies |
|
| 256 | 2N650 | Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
 New Jersey Semiconductor |
|
| Esta página es del resultado de búsqueda del 2N65. Si pulsa el resultado de búsqueda de 2N65 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |