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Datasheet 2N5031 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N5031 | HIGH FREQUENCY TRANSISTOR 2N5031 2N5032
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation AT(a< = 25°C
Derate above 25°C
Operating and Storage Junc |
 Motorola Semiconductors |
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| 3 | 2N5031 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5031
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (ty |
 Microsemi Corporation |
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| 2 | 2N5031 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N5031
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (ty |
 Advanced Power Technology |
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| 1 | 2N5031 | Trans GP BJT NPN 10V 0.02A 4-Pin TO-72 |
 New Jersey Semiconductor |
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