Datasheet 2N3960UB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2N3960UB	NPN SILICON SWITCHING TRANSISTOR TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/399 DEVICES 2N3960 2N3960UB LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C	Microsemi

2N396 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2N3966	Junction(2N3xxx) -Gate Field-Effect Transistor BV GSS VP Max. (V) 5.0 2.0 6.0 3.0 6.0 6.0 6.0 5.0 6.0 @ VD S (V) 20 20 15 10 15 15 10 20 10 & ID Min. (nA) 1.0 1.0 0.5 1.0 1.0 1.0 10.0 1.0 1.0 (mmho) 2.00 1.00 3.00 0.08 2.50 - Gfs Max. (mmho) 3.00 2.00 6.50 0.25 - Part No. Min. (V) Min. (V) 2.0 0.6	Taitron Components
2N3966	JFET HIGH-FREQUENCY AMPLIFIER 2N3966 CASE 20-03, STYLE 1 TO-72 (TO-206AF) JFET HIGH-FREQUENCY AMPLIFIER —N-CHANNEL DEPLETION MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation Ta = 25°C Derate above 25°C (Free Air) Lead Temperature (	Motorola Semiconductors
2N3967	Junction(2N3xxx) -Gate Field-Effect Transistor BV GSS VP Max. (V) 5.0 2.0 6.0 3.0 6.0 6.0 6.0 5.0 6.0 @ VD S (V) 20 20 15 10 15 15 10 20 10 & ID Min. (nA) 1.0 1.0 0.5 1.0 1.0 1.0 10.0 1.0 1.0 (mmho) 2.00 1.00 3.00 0.08 2.50 - Gfs Max. (mmho) 3.00 2.00 6.50 0.25 - Part No. Min. (V) Min. (V) 2.0 0.6	Taitron Components

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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