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2N3819 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
9 2N3819

SILICON N-CHANNEL JFET

2N3819 SILICON N-CHANNEL JFET w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Drain-Source Voltage Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction

Central Semiconductor
Central Semiconductor
2N3819 データシート pdf
8 2N3819

JFET VHF/UHF AMPLIFIER

2N3819 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current @Total Device Dissipation Ta = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDS Vdg vgsr igf pd Value 25 25 25 10 360 2.88 Unit Vdc Vdc Vdc mAdc mW mW/°C Tj, T stg -65 to +150 °C CASE 29-02, STYLE 22 TO-92 (TO-226AA)

Motorola
Motorola
2N3819 データシート pdf
7 2N3819

N-Channel RF Amplifier

2N3819 N−Channel RF Amplifier TO−92 Type Package Description: The 2N3819 is a N−Channel RF Amplifier transistor designed for RF amplifier and mixer applications operating up to 450Mhz, and for analog switching requiring low capacitance. Absolute Maximum Ratings: (TC = +25C, Note 1 unless otherwise specified) Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . .

NTE
NTE
2N3819 データシート pdf
6 2N3819

N-Channel JFET

N-Channel JFET Product Summary VGS(off) (V) v –8 V(BR)GSS Min (V) –25 gfs Min (mS) 2 IDSS Min (mA) 2 2N3819 Features D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA Benefits D Wideband High Gain D Very High System Sensitivity D High Quality of

TEMIC
TEMIC
2N3819 データシート pdf
5 2N3819

N-Channel JFET

N-Channel JFET 2N3819 Vishay Siliconix PRODUCT SUMMARY VGS(off) (V) v –8 V(BR)GSS Min (V) –25 gfs Min (mS) 2 IDSS Min (mA) 2 FEATURES D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA BENEFITS D Wideband High Gain D Very High System Sensitivity D

Vishay
Vishay
2N3819 データシート pdf
4 2N3819

SFET RF/VHF/ UHF/ Amplitiers

www.Datasheet.jp 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VDG VGS ID IGF T

Fairchild Semiconductor
Fairchild Semiconductor
2N3819 データシート pdf
3 2N3819

JFET VHF/UHF Amplifier N-Channel-Depletion

2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Channel Temperature Range Symbol VDS VDG VGS ID IG(f) PD 350 2.8 Tstg –65 to +150 mW mW/°C °C Value 25 25 25 100 10 Unit Vdc Vdc V

ON Semiconductor
ON Semiconductor
2N3819 データシート pdf


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