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2N3096 データシート PDF ( Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 2 | 2N3096 | (2N309x Series) 110 AMP RMS SCRS |
 International Rectifier |
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| 1 | 2N3096 | Thyristor SCR 30V 8A 3-Pin TO-18 |
 New Jersey Semiconductor |
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2N3 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| 2N3879 | NPN POWER SILICON TRANSISTOR 2N3879 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 NPN POWER SILICON TRANSISTOR IN A HERMETICALLY SEALED METAL PACKAGE 6.35 (0.250) 8.64 (0.340) FEATURES • VCEO = 75V • IC = 7A 24.13 (0.95) 24.63 (0.97) 14.48 (0.57 |
 Seme LAB |
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| 2N3499 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature |
 Motorola |
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| 2N3713 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3713 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·De |
 Inchange Semiconductor |
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| 2N3094 | Thyristor SCR 30V 8A 3-Pin TO-18 |
New Jersey Semiconductor |
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| 2N3396 | Trans GP BJT NPN 25V 3-Pin TO-92 Box |
New Jersey Semiconductor |
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| 2N3510 | Trans GP BJT NPN 150V 3-Pin TO-39 |
New Jersey Semiconductor |
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