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Datasheet 2N1132 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N1132 | SILICON PLANAR PNP TRANSISTOR SILICON PLANAR PNP TRANSISTOR
2N1132
• High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose
and Switching Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Vol |
 TT |
 |
| 4 | 2N1132 | SWITCHING TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(R BE « 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a Ta = 25°C Derate above 25°C
Total Device Dissipation (a Tq = 25°C Derate above 25°C
Total Device Di |
 Motorola Semiconductors |
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| 3 | 2N1132 | LOW POWER PNP SILICON TRANSISTOR TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX
TO-39*
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCE |
 Microsemi |
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| 2 | 2N1132A | SWITCHING TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(R BE « 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a Ta = 25°C Derate above 25°C
Total Device Dissipation (a Tq = 25°C Derate above 25°C
Total Device Di |
Motorola Semiconductors |
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