2MBI1200VT-170E データシート PDFこの部品の機能は「Power DevICes (igbt)」です。 |
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部品番号 |
2MBI1200VT-170E Power Devices (IGBT) 6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly mod ETC |
文字列「 2MBI1200VT170 」「 2MBI1200VT 」で始まる検索結果です。 |
部品説明 |
828302120000x (8283 Series) Plug Straight w w w .D at aS he et 4U .c om Kyocera |
828312120000x (8283 Series) Plug Straight w w w .D at aS he et 4U .c om Kyocera |
9ZX21200 12-OUTPUT DIFFERENTIAL Z-BUFFER 12-OUTPUT DIFFERENTIAL Z-BUFFER FOR PCIE GEN3 AND QPI DATASHEET 9ZX21200 Description The 9ZX21200 is a small-footprint 12-output differential buffer that meets all the performance requirements of the Intel DB1200Z specification. The 9ZX21200 is backwards compatible to PCIe Gen1 IDT |
HM31-21200 Encapsulated Current Sense Transformers MODEL HM31 SERIES Encapsulated Current Sense Transformers FEATURES AND BENEFITS • • • • • Complies with VDE safety agency requirements Excellent temperature characteristics Encapsulating technique used to ensure long term reliability Excellent linearity (current vs. ETC |
HM31-21200L Encapsulated Current Sense Transformers MODEL HM31 SERIES Encapsulated Current Sense Transformers FEATURES AND BENEFITS • • • • • Complies with VDE safety agency requirements Excellent temperature characteristics Encapsulating technique used to ensure long term reliability Excellent linearity (current vs. ETC |
KMM5321200C2W 1M x 32 DRAM SIMM DRAM MODULE KMM5321200C2W/C2WG 1Mx32 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. KMM5321200C2W/C2WG • Changed Module Part No. from KMM Samsung Semiconductor |
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