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データシート 2M219 PDF ( Circuit Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 2 | 2M219 | 2M219 Series 2M219 Series 1. Specifications Voltage (ebm) Current (Ib) Maixmum Output (Po) Frequency (fo) Filament (Ef) Weight Applicable for MWO 4.2kV 300mAdc 945W 2458MHz 3.3V 810g 700～900W 2. Instruction o |
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| 1 | 2M219 | 2M219 Series FRANK ELECTRONIC & PLASTIC CO.,LTD. 2M219 SERIES 1. ELECTRICAL CHARCTERISTICS Peak anode voltage (ebm) Average anode current (Ib) Average output power (Po) Frequency (fo) Filament voltage(Ef) Weight |
 FRANK ELECTRONIC |
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2M2 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| 2M200Z | Glass Passivated Junction Silicon Zener Diodes 2M6.8Z - 2M200Z Taiwan Semiconductor CREAT BY ART 2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free acco |
 Taiwan Semiconductor |
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| 2M27Z | Glass Passivated Junction Silicon Zener Diodes 2M6.8Z - 2M200Z Taiwan Semiconductor CREAT BY ART 2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free acco |
Taiwan Semiconductor |
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| 2M20Z | Glass Passivated Junction Silicon Zener Diodes 2M6.8Z - 2M200Z Taiwan Semiconductor CREAT BY ART 2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free acco |
Taiwan Semiconductor |
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| 2M22Z | Glass Passivated Junction Silicon Zener Diodes 2M6.8Z - 2M200Z Taiwan Semiconductor CREAT BY ART 2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free acco |
Taiwan Semiconductor |
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| 2M24Z | Glass Passivated Junction Silicon Zener Diodes 2M6.8Z - 2M200Z Taiwan Semiconductor CREAT BY ART 2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free acco |
Taiwan Semiconductor |
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| 2M226-29F | Continuous Wave Magnetron Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ |
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