2AA118 データシート PDFこの部品の機能は「Diode ( Rectifier )」です。 |
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部品番号 |
2AA118 Diode ( Rectifier ) American Microsemiconductor |
文字列「 2AA118 」「 2AA118 」で始まる検索結果です。 |
部品説明 |
232266211813 Thermistors Philips Components Product specification Thermistors for overload protection PTC 56 V and 265 V (Ts = 120 °C) FEATURES • Different voltages to be chosen in function of the application • Available in three mechanical versions – 2322 66. 0.... naked d Philips Components |
2SA2118 Power Transistors Silicon PNP epitaxial planar type Power Transistors 2SA2118 Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full Panasonic Semiconductor |
2SC2118 Silicon NPN Epitaxial Planar Type w w w .d e e h s a t a . u t4 m o c Toshiba |
2SD2118 Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2118 DESCRIPTION ·High current capacity ·Small and slim package making it easy to make 2SD2118-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lo Inchange Semiconductor |
2SD2118 Low VCE(sat) Transistor (Strobe flash) Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transist ROHM Semiconductor |
2SD2118 NPN Plastic Encapsulated Transistor Elektronische Bauelemente 2SD2118 5A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics D-Pack (TO-252) SeCoS |
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