2650B PDF Datasheet

Data Sheet, Rev. 1 April 2001 2650A/B Broadband Photodiode Description The 2650A/B provides the proven high performance of our photodiode technology in a very practical, cost-effective package. The 2650-series features high linearity and low capacitance over a 1 GHz bandwidth. These broadband photodiodes are housed in a small, environmentally rugged coaxial package. The 2650A/

Data Sheet, Rev. 1 April 2001 2650A/B Broadband Photodiode Description The 2650A/B provides the proven high performance of our photodiode technology in a very practical, cost-effective package. The 2650-series features high linearity and low capacitance over a 1 GHz bandwidth. T

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High volta

Ordering number : ENN6781A 2SD2650 NPN Triple Diffused Planar Silicon Transistor 2SD2650 Color TV Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SD2650] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(V

ESMT/EMP Features z Operation Voltage: 3V to 5.5V z Cap-less Output - Eliminates Output Capacitors - Improves Low Frequency Response - Reduces POP/Clicks z Low Noise and THD - SNR > 102dB - Typical Vn < 12uVrms - THD+N < 0.02% z Maximum Output Voltage Swing into 2.5k Load - 2Vrms

ESMT/EMP Features z z z z z z z z z z Supply voltage range: 2.5 V to 5.5 V Support single-ended or differential analog input Low static operation current Low shut-down current Short power-on transient time Two volume control modes „ DC volume control from -38dB to +20dB „ 4-ste