STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT Table 1: General Features TYPE VCES VCE(sat) (Max) IC @25°C @100°C STGW20NC60VD 600 V < 2.5 V 30 A s OFF LOSSES INCLUDE

2A Avg. 600 Volts FRED 20NFB60

FRD FEATURES Type: 20NFA40 OUTLINE DRAWING * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 400 Volts and 600 Volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output

® STB20NE06L N - CHANNEL 60V - 0.06Ω - 20A TO-263 STripFET™ POWER MOSFET TYPE STB20NE06L s s s s s s V DSS 60 V R DS(on) < 0.07 Ω ID 20 A TYPICAL RDS(on) = 0.06 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC LOW THRESHOLD DRIVE ADD SUFF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N45 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mod

UNISONIC TECHNOLOGIES CO., LTD 20N40K-MT Preliminary 20A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a mi

HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE =