Datasheet 1SS420CT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	1SS420CT	Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (pea	Toshiba

1SS42 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
1SS426	Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z Compact 2-pin package: Ideal for high-density mounting z Low forward voltage : VF (3) = 0.98 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : C	Toshiba
1SS422	Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA • Small package suitable for mounting on a small space 1SS422 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol	Toshiba
1SS427	Silicon Epitaxial Planar Type Diode Switching Diodes Silicon Epitaxial Planar 1SS427 1. Applications • Ultra-High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS427 1: Cathode 2: Anode 1: Cathode 2: Anode Start of commercial production 2005-12 1 2014-07-08 Rev.3.0 1SS427 3. Absolute Maximum	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
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