|
|
Datasheet 1SS420 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 1SS420 | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420
High-Speed Switching Applications
• Low reverse current: IR = 5 µA (max)
1SS420
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
VRM
35
Reverse voltage
VR 30
Maximum (peak) for |
Toshiba |
|
1 | 1SS420CT | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420CT
High-Speed Switching Applications
• Low reverse current: IR = 5 μA (max)
0.6±0.05
1SS420CT
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Maximum (pea |
Toshiba |
Esta página es del resultado de búsqueda del 1SS420. Si pulsa el resultado de búsqueda de 1SS420 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |