Datasheet 1SS419 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	1SS419	Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK • Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R	Toshiba

1SS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
1SS99	Silicon Detector and Mixer Diode	NEC
1SS97	Mixer Diode Free Datasheet http:// Free Datasheet http://	NEC
1SS108	Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2	Hitachi Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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