1SS417 データシート PDFこの部品の機能は「SilICon Epitaxial Planar Type Diode」です。 |
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部品番号 |
1SS417 Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 1SS417 High Speed Switching Application • Small package • Low forward voltage: VF (3) = 0.56V (typ.) • Low reverse current: IR = 5 Toshiba |
文字列「 1SS417 」「 1SS417 」で始まる検索結果です。 |
部品説明 |
1SS417CT Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 • Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μ Toshiba |
1SS417FN2 SURFACE MOUNT SCHOTTKY BARRIER P1SS417FN2 SURFACE MOUNT SCHOTTKY BARRIER Voltage 40 V Current 100 mA Features Small package Low forward voltage : VF(3)=0.51V(typ.) Low reverse current : IR=5A(Max.) Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as Pan Jit International |
1SS417TM HIGH SPEED SWITCHING DIODE 1SS417TM HIGH SPEED SWITCHING APPLICATION FEATURES • Small package • Low forward voltage : VF(3)=0.56V(typ.) • Low reverse current : I R=5µA (Max.) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case : SOD-923, Plastic • Terminals : Solderable p Pan Jit International |
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