1SS412 データシート PDFこの部品の機能は「SilICon Epitaxial Planar Type Diode」です。 |
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部品番号 |
1SS412 Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse current z Small total capacitance z Small package : VF Toshiba |
文字列「 1SS412 」「 1SS412 」で始まる検索結果です。 |
部品説明 |
2SA1412 PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 NEC |
2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 NEC |
2SA1412-Z Transistor SMD Type PNP Silicon Transistor 2SA1412-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Kexin |
2SA1412-Z SILICON POWER TRANSISTOR To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company na Renesas |
2SA1412-Z Transistor SMD Type Transistors Product specification 2SA1412-Z TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0. TY Semiconductor |
2SB1412 Low Frequency Transistor Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : ROHM Semiconductor |
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