Datasheet 1SS399 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	1SS399	Silicon Epitaxial Planar Diode TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications 1SS399 Unit: mm  Small package : SC-61  Low forward voltage : VF = 1.0 V (typ.)  High voltage : VR = 400 V (min)  Fast reverse recovery time : trr = 0.5 μs (typ.)  Small total	Toshiba Semiconductor

1SS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
1SS99	Silicon Detector and Mixer Diode	NEC
1SS97	Mixer Diode Free Datasheet http:// Free Datasheet http://	NEC
1SS108	Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2	Hitachi Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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