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Datasheet 1SS398 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 1SS398   Silicon Epitaxial Planar Diode

TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High-Voltage, High-Speed Switching Applications 1SS398 Unit: mm  Small package : SC-59  Low forward voltage : VF = 1.0 V (typ.) @ IF = 100 mA  Fast reverse recovery time : trr = 0.5 μs (typ.)  Small total capacitance : CT = 2.5
Toshiba Semiconductor
Toshiba Semiconductor
datasheet 1SS398 pdf

1SS Datasheet ( Hoja de datos ) - resultados coincidentes

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1SS99

Silicon Detector and Mixer Diode

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1SS108

Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2
Hitachi Semiconductor
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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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