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Datasheet 1SS385FV Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 1SS385FV | Silicon Epitaxial Schottky Barrier Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV
1SS385FV
High-Speed Switching Applications
z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package
Absolute Maximum Ratings (Ta = 25°C)
0.22±0.05
Unit: mm
1.2±0.05 0.8±0.05
1 23
0.32±0.05
1.2±0.05 0.8±0.05 |
Toshiba |
1SS38 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
1SS387 | High Speed Switching Diode |
MDD |
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1SS389 | Silicon Epitaxial Schottky Barrier Type Diode |
Toshiba Semiconductor |
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1SS388 | DIODE (HGH SPEED SWITCHING APPLICATION) |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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