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1SS190 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
6 1SS190

Surface Mount Switching Diodes

Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Method 208 * Polarity: See diagram * Weight: 0.008 grams SOT-23 Outline Dimensions

WEITRON
WEITRON
1SS190 データシート pdf
5 1SS190

SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: E3 E3 SOT-23 1 3 2 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forw

JCET
JCET
1SS190 データシート pdf
4 1SS190

Switching Diodes

1. N.C 2. CATHODE 3. ANODE Features — Low forward voltage : VF(3)=0.92V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: E3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range Symbol VRM VR IFM

LGE
LGE
1SS190 データシート pdf
3 1SS190

SWITCHING DIODE

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS190 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed

RECTRON
RECTRON
1SS190 データシート pdf
2 1SS190

DIODE

RoHS 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:E3 2.9 1.9 0.95 0.95 0.4 Unit:mm TRELECTRICAL CHARACTERISTICS o C(Ta=25 C unless oth

WEJ
WEJ
1SS190 データシート pdf
1 1SS190

SILICON EPITAXIAL PLANAR DIODE

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Ultra High Speed Switching Application 1SS190 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse

Toshiba Semiconductor
Toshiba Semiconductor
1SS190 データシート pdf


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