1SS190 データシート PDF 検索 |
番号 | 部品番号 | 部品説明 | メーカ | |
6 | 1SS190 | Surface Mount Switching Diodes Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Method 208 * Polarity: See diagram * Weight: 0.008 grams SOT-23 Outline Dimensions |
![]() WEITRON |
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5 | 1SS190 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: E3 E3 SOT-23 1 3 2 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forw |
![]() JCET |
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4 | 1SS190 | Switching Diodes 1. N.C 2. CATHODE 3. ANODE Features Low forward voltage : VF(3)=0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: E3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range Symbol VRM VR IFM |
![]() LGE |
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3 | 1SS190 | SWITCHING DIODE RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS190 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed |
![]() RECTRON |
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2 | 1SS190 | DIODE RoHS 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:E3 2.9 1.9 0.95 0.95 0.4 Unit:mm TRELECTRICAL CHARACTERISTICS o C(Ta=25 C unless oth |
![]() WEJ |
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1 | 1SS190 | SILICON EPITAXIAL PLANAR DIODE TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Ultra High Speed Switching Application 1SS190 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse |
![]() Toshiba Semiconductor |
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部品番号 | 部品説明 | メーカ | |
ALC887 | The ALC887 is a 7.1 Channel High Definition Audio Codec with two independent SPDIF outputs. Featuring eight channels of DAC support 7.1 sound playback, and integrates two stereo ADC that can support a stereo microphone, and feature Acoustic Echo Cancellation (AEC), Beam Forming (BF), and Noise Suppression (NS) for voice applications. |
![]() Realtek |
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BK3431 | The BK3431 chip is a highly integrated Bluetooth 4.0 low energy single mode device. It integrates a high-performance RF transceiver, baseband, ARM-core Micro processor, rich feature peripheral units, programmable protocol and profile
to support BLE application. The Flash program memory makes it suitable for customized applications.
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![]() Beken |
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C1318 | This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package. |
![]() Panasonic |
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F1B2CCI | VRRM=200V, Stack Silicon Diffused Diode, TO-220IS Package. |
![]() KEC |
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20N60C2 | 650V, Cool MOS Power Transistor, SPP20N60C2, SPB20N60C2, SPA20N60C2. |
![]() Infineon |
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