1SS14C1 データシート PDF 検索 |
番号 | 部品番号 | 部品説明 | メーカ | |
1 | 1SS14C1 | (1SS13C1 - 1SS15C1) high speed low noise switching diode 1SS13C1 THRU 1SS15C1 HUAGAO LIMITED high speed low noise switching diode Reverse Voltage - 20 to 40 Volts Forward Current - 1.0Ampere Qs9000 SOD-123 FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High su |
![]() HUAGAO |
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1SS1 Datasheet ( データシート ) - 検索結果 |
部品番号 | 部品説明 | メーカ | |
1SS187 | DIODE RoHS 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 O |
![]() WEJ |
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1SS184 | SILICON EPITAXIAL PLANAR DIODE Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb / RoHS Free SILICON EPITAXIAL PLANAR DIODE |
![]() EIC |
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1SS193 | Surface mount switching diode BL Galaxy Electrical Production specification Surface mount switching diode FEATURES z Low forward voltage Pb VF(3)=0.9V(typ). z Fast switching. Lead-free z Fast reverse recovery time:trr=1.6ns(typ) 1SS193 APPLICATIONS z High speed switching application. SOT-23 ORDERI |
![]() Galaxy Semi-Conductor |
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1SS115 | Diode (spec sheet) |
![]() American Microsemiconductor |
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1SS187 | SILICON EPITAXIAL PLANAR DIODE 1SS187 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage |
![]() SEMTECH |
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1SS181 | Plastic-Encapsulated Diodes Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Current IF : 100 m A Reverse Voltage VR: 80 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 2. 9 1. 9 |
![]() TRANSYS |
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1SS193 | SWITCHING DIODE RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS193 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC MECHANICAL DATA * Cas |
![]() RECTRON |
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部品番号 | 部品説明 | メーカ | |
ALC887 | The ALC887 is a 7.1 Channel High Definition Audio Codec with two independent SPDIF outputs. Featuring eight channels of DAC support 7.1 sound playback, and integrates two stereo ADC that can support a stereo microphone, and feature Acoustic Echo Cancellation (AEC), Beam Forming (BF), and Noise Suppression (NS) for voice applications. |
![]() Realtek |
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BK3431 | The BK3431 chip is a highly integrated Bluetooth 4.0 low energy single mode device. It integrates a high-performance RF transceiver, baseband, ARM-core Micro processor, rich feature peripheral units, programmable protocol and profile
to support BLE application. The Flash program memory makes it suitable for customized applications.
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![]() Beken |
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C1318 | This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package. |
![]() Panasonic |
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F1B2CCI | VRRM=200V, Stack Silicon Diffused Diode, TO-220IS Package. |
![]() KEC |
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20N60C2 | 650V, Cool MOS Power Transistor, SPP20N60C2, SPB20N60C2, SPA20N60C2. |
![]() Infineon |
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