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1SS14C1 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 1SS14C1

(1SS13C1 - 1SS15C1) high speed low noise switching diode

1SS13C1 THRU 1SS15C1 HUAGAO LIMITED high speed low noise switching diode Reverse Voltage - 20 to 40 Volts Forward Current - 1.0Ampere Qs9000 SOD-123 FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High su

HUAGAO
HUAGAO
1SS14C1 データシート pdf



1SS1 Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
1SS187

DIODE

RoHS 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 O

WEJ
WEJ
1SS14C1 データシート pdf
1SS184

SILICON EPITAXIAL PLANAR DIODE

Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb / RoHS Free SILICON EPITAXIAL PLANAR DIODE

EIC
EIC
1SS14C1 データシート pdf
1SS193

Surface mount switching diode

BL Galaxy Electrical Production specification Surface mount switching diode FEATURES z Low forward voltage Pb VF(3)=0.9V(typ). z Fast switching. Lead-free z Fast reverse recovery time:trr=1.6ns(typ) 1SS193 APPLICATIONS z High speed switching application. SOT-23 ORDERI

Galaxy Semi-Conductor
Galaxy Semi-Conductor
1SS14C1 データシート pdf
1SS115

Diode (spec sheet)

American Microsemiconductor
American Microsemiconductor
1SS14C1 データシート pdf
1SS187

SILICON EPITAXIAL PLANAR DIODE

1SS187 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage

SEMTECH
SEMTECH
1SS14C1 データシート pdf
1SS181

Plastic-Encapsulated Diodes

Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Current IF : 100 m A Reverse Voltage VR: 80 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 2. 9 1. 9

TRANSYS
TRANSYS
1SS14C1 データシート pdf
1SS193

SWITCHING DIODE

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS193 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC MECHANICAL DATA * Cas

RECTRON
RECTRON
1SS14C1 データシート pdf


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