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1SS14C1 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | 1SS14C1 | (1SS13C1 - 1SS15C1) high speed low noise switching diode 1SS13C1 THRU 1SS15C1 HUAGAO LIMITED high speed low noise switching diode Reverse Voltage - 20 to 40 Volts Forward Current - 1.0Ampere Qs9000 SOD-123 FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High su |
 HUAGAO |
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1SS1 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| 1SS196 | SILICON EPITAXIAL PLANAR DIODE 1SS196 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage |
 SEMTECH |
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| 1SS190 | Surface Mount Switching Diodes Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable |
 WEITRON |
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| 1SS181 | SWITCHING DIODE RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS181 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC MECHANICAL DATA * Cas |
 RECTRON |
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| 1SS196 | Switching Diodes 1. N.C. 2. ANODE 3. CATHODE Features Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectifie |
 LGE |
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 Realtek |
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