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Datasheet 1N5415 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5415 | FAST RECOVERY RECTIFIERS 1N5415-1N5420
High-reliability discrete products and engineering services since 1977
FAST RECOVERY RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standar |  Digitron Semiconductors | rectifier |
| 2 | 1N5415 | FAST RECOVERY RECTIFIERS Certificate TH97/10561QM
Certificate TW00/17276EM
1N5415 - 1N5420
FAST RECOVERY RECTIFIERS
PRV : 50 - 600 Volts Io : 3.0 Amperes
FEATURES :
* Glass Passivated Junction Chip * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast recovery time * |  EIC | rectifier |
| 3 | 1N5415 | Fast Rectifier Diode POWER DISCRETES Description
Quick reference data
V = 50 - 600V R
IF = 4.5A trr = 150 - 400nS I = 1.0µA
R
1N5415 THRU 1N5420 3SF05 THRU 3SF6
Axial Leaded Hermetically Sealed Fast Rectifier Diode
Features
Very low reverse recovery time Hermetically sealed non-cavity construction. Low switching losse |  Semtech | rectifier |
| 4 | 1N5415 | VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS 1N5415 thru 1N5420
Available on commercial
versions
VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/411
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot b |  Microsemi | rectifier |
| 5 | 1N5415 | GLASS PASSIVATED FAST SWITCHING RECTIFIER 1N5415 THRU 1N5420
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes
FEATURES
E D
Case Style G4
0.180 (4.6) 0.115 (2.9) DIA.
1.0 (25.4) MIN.
0.300 (7.6) MAX.
♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bon |  General Semiconductor | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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