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Datasheet 1N5401G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | 1N5401G | Diode, 100V, 3A, SILICON RECTIFIER 1N5400G THRU 1N5408G
GLASS PASSIVATED SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
DO-201AD
0.220 (5.6) 0.197(5.0)
DIA.
1.0 (25.4) MIN.
0.375(9.5) 0.285(7.2)
FEATURES
The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Const |
 Shunye |
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| 15 | 1N5401G | Glass Passivated Rectifiers CREAT BY ART
Glass Passivated Rectifiers
FEATURES
- Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free accor |
 Taiwan Semiconductor |
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| 14 | 1N5401G | 3A, 100V, Diode, GLASS PASSIVATED RECTIFIER 1N5400G - 1N5408G
3.0A GLASS PASSIVATED RECTIFIER Features
· · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Plastic Material has UL Flammability Classification 94V-0
A
B
A
D
C
Mechanical Da |
 Diodes Incorporated |
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| 13 | 1N5401G | 3A GENERAL PURPOSE GPP DIODES |
 Leshan Radio Company |
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| Número de pieza | Descripción | Fabricantes | |
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