1N415C データシート PDFこの部品の機能は「Diode Rf Mixer Pn Mixer」です。 |
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部品番号 |
1N415C (1N41xx) X Band Point Contact Mixer Diodes Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-B ETC |
1N415C Diode RF Mixer PN Mixer New Jersey Semiconductor |
文字列「 1N415 」「 1N415C 」で始まる検索結果です。 |
部品説明 |
1N4150 High-speed diodes DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4150; 1N4151 High-speed diodes Product specification Supersedes data of 1996 Sep 03 1999 Jun 01 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package NXP Semiconductors |
1N4150 Silicon Epitaxial Planar Diode 1N4150 Vishay Telefunken Silicon Epitaxial Planar Diode Features D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Rep Vishay Telefunken |
1N4150 SIGNAL DIODE RECTRO N SEM ICO NDU CTO R TECHN ICAL SPECIFICATIO N 1N4150 1N4150 SIGNAL DIODE Absolute Maximum Ratings (Ta=25 ° C) Items Symbol Ratings Unit Reverse Voltage VR 50 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW / ° C (25 ° C) Forward Current IF 200 mA Ju Rectron Semiconductor |
1N4150 High Conductance Ultra Fast Diode 1N4150 / FDLL4150 Discrete POWER & Signal Technologies 1N4150 / FDLL4150 COLOR BAND MARKING DEVICE FDLL4150 1ST BAND 2ND BAND BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast D Fairchild Semiconductor |
1N4150 FAST SWITCHING DIODE 1N4150 FAST SWITCHING DIODE Features · · · · Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductance A B A Mechanical Data · · · · · Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cath Diodes Incorporated |
1N4150 Small Signal Diodes 1N4150 Small Signal Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ Silicon Epitaxial Planar Diode ♦ For general purpose and switching. max. ∅.079 (2.0) max. .150 (3.8) ♦ This diode is also available in other case styles including: the SOD-123 case with the type designation General Semiconductor |
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