13N90 データシート PDFこの部品の機能は「N-channel Mosfet Transistor」です。 |
検索結果を表示する |
部品番号 |
13N90 N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N90 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On Inchange Semiconductor |
文字列「 13N90 」「 13N90 」で始まる検索結果です。 |
部品説明 |
2SA1390 Silicon PNP Epitaxial 2SA1390 Silicon PNP Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector Hitachi Semiconductor |
2SB1390 Silicon PNP Triple Diffused 2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 12 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Hitachi Semiconductor |
2SB1390 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1390 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING SavantIC |
2SB139040ML SCHOTTKY BARRIER DIODE CHIPS 2SB139040ML 2SB139040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB139040ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products Silan Microelectronics |
2SB139060ML SCHOTTKY BARRIER DIODE CHIPS 2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB139060ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products Silan Microelectronics |
2SD1390 Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABS Inchange Semiconductor |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |