13005BA PDF Datasheet

UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.  FEATURES 1 * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads

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UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR£¨NPN £© TO¡ª 220 FEATURES Power dissipation PCM : 1.5 W£¨ Tamb=25¡æ£© Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700

Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13005 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-220 .datasheet39.comom 1. BASE 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 4 A ICM: Collector-base voltage 700 V V(BR)CBO

R NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005 主要参数 IC VCEO PC(TO-220) MAIN CHARACTERISTICS 4A 400V 75W 封装 Package 用途 z z z z z 节能灯 电子镇流器 高频开关电源 高频功率变换 一般功率放大