SKiiP 11NAB126V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper ,$3  : ,$3 =  1 (' 7859 2 ! ; 4 -  1 (' 20    !  V

UNISONIC TECHNOLOGIES CO., LTD 11NM65-U2 Preliminary 11A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM65-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state res

UNISONIC TECHNOLOGIES CO., LTD 11NM40 Preliminary 11A, 400V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM40 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal o

UNISONIC TECHNOLOGIES CO., LTD 11N50K-MT Preliminary 11A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N50K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minim

UNISONIC TECHNOLOGIES CO., LTD 11NM70 11A, 700V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM70 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rug

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL

UNISONIC TECHNOLOGIES CO., LTD 11NM60-U2 11A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a hi