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11N60S5 データシート PDF

この部品の機能は「Spp11n60s5」です。


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部品番号
11N60S5

SPP11N60S5


SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor www.Datasheet.jp VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V Ω A Feature • New revolutionary high voltage technology �


Infineon Technologies AG
Infineon Technologies AG

データシート pdf



文字列「 11N60S5 」「 11N60S5 」で始まる検索結果です。

部品説明

MAX11605

(MAX11600 - MAX11605) 2-Wire Serial 8-Bit ADCs

19-4554; Rev 0; 4/09 2.7V to 3.6V and 4.5V to 5.5V, Low-Power, 4-/8-/12-Channel 2-Wire Serial 8-Bit ADCs General Description The MAX11600–MAX11605 low-power, 8-bit, multichannel, analog-to-digital converters (ADCs) feature internal track/hold (T/H), voltag

Maxim Integrated Products
Maxim Integrated Products

 データシート pdf


R7011605

General Purpose Rectifier (300-550 Amperes Average 4400 Volts)

Powerex Power Semiconductors
Powerex Power Semiconductors

 データシート pdf


SPB11N60S5

Cool MOS Power Transistor

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS

Infineon Technologies
Infineon Technologies

 データシート pdf


SPI11N60S5

Cool MOS Power Transistor

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS

Infineon Technologies
Infineon Technologies

 データシート pdf


SPP11N60S5

Cool MOS Power Transistor

e e Cool MOS™h Power Transistor S Feature ta a • New revolutionary high voltage technology D . • Ultra low gate charge w wPeriodic avalanche rated • w• Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance U 4 t m o .c SPP11N60S5, SPB

Infineon Technologies
Infineon Technologies

 データシート pdf


SPW11N60S5

Cool MOS Power Transistor

SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.38 11 P-TO247 V

Infineon Technologies
Infineon Technologies

 データシート pdf

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